汪洋，女，1981年生，博士，教授，硕士生导师，2015年6月获湘潭大学理学博士学位。研究兴趣为高压高防护级别ESD/TVS器件结构设计及机理研究、器件级和电路级建模、TCAD工艺及器件仿真方法研究、全芯片ESD防护设计。完成省级以上项目3项。发表论文32篇，其中SCI收录18篇、EI收录6篇、获湖南省仪器仪表学会优秀论文一等奖2篇。获集成电路布图设计登记10项，授权发明专利4项，授权实用新型专2项。
[1] VHDL硬件描述语言与复杂数字系统设计
[2] 微电子工艺原理
[3] 集成电路工艺与器件
[4] 微电子科学与工程专业导学
静电防护器件、瞬态电压抑制器件、TVS器件的片上集成
[1] Yang Wang*, Jieyu Li, DanDan Jia, Weipeng Wei, Analyzing the impact of guard-ring on different dual-direction SCR by device simulation and TLP measurement, Microelectronics Reliability, 2021, DOI: 10.1016/j.microrel.2021.114398.
[2] Yang Wang*, Jieyu Li, Weipeng Wei, Pei Cao, Wenmiao Cao, Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection, International Journal of Electronics Letters, 2021, DOI: 10.1080/21681724.2021.1969435.
[3] Weipeng Wei, Yang Wang*, Xijun Chen, Yifei Zheng, Jieyu Li, Pei Cao, Wenmiao Cao. Investigation of Diferent Conduction States on the Performance of NMOS？Based Power Clamp ESD Device, Journal of Electrical Engineering & Technology, 2021, 16:1583-1589.
[4] Wang, Yang*; Ding, Liqiang; Bao, Zhanying; Yang, Hongjiao; Jin, Xiangliang; High current operational amplifier with current limiting protection circuit, IET Circuits, Devices and Systems, 2020, 14(2)：251-259.
[5] Wang, Yang*; Chen, Xijun; Dong, Peng; Improvement of electrostatic discharge current-handling capability for high-voltage multi-finger nLDMOS devices with self-triggered technique, Semiconductor Science and Technology, 2020, 35(2020)：065010-065010.
[6] Wang, Yang*; Chen, Xijun; Jia, Dandan; Lu, Jun; Wei, Weipeng; Dong, Peng; The influence of N-type buried layer on SCR ESD protection devices, IEEE Transactions on Device and Materials Reliability, 2020, 20(4)：658-666.
[7] Li, Jieyu; Wang, Yang*; Jia, Dandan; Wei, Weipeng; Dong, Peng; New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications, Chinese Physics B, 2020, 29(10)：108501-108501.
[8] Jia,Dandan; Wang,Yang*; Chen, Xijun; Bao, Zhanying; Lu, Jun; Dong, Peng; Design and analysis of a multi-finger dual-direction SCR discharging electro-static current in a gradual transition manner, Semiconductor Science and Technology, 2020, 35(2020)：075017-075017.
[9] Ding, Liqiang; Wang, Yang*; Bao, Zhanying; Liao, Hanzhang; Jin, Xiangliang; A nano-ampere current reference circuit in a 0.5 μm CDMOS technology, Microelectronics Journal, 2019, 90(2019)：336-341.
[10] Chen, Xijun; Wang, Yang*; Jin, Xiangliang; Zhou, Zijie; Lu, Jun; Jia, Dandan; An ESD robust high holding voltage dual-direction SCR with symmetrical I-V curve by inserting a floating P plus in PWell, Solid-State Electronics, 2019, 160(2019)：0-107627.
[11] Zheng, Yifei; Jin, Xiangliang; Wang, Yang*; Guan, Jian; Hao, Sanwan; Luo, Jun; Island diodes triggering SCR in waffle layout with high failure current for HV ESD protection, Solid-State Electronics, 2019, 152(2019)：17-23.
[12] Jin, Xiangliang; Zheng, Yifei; Wang, Yang*; Guan, Jian; Hao, Shanwan; Li, Kan; Luo, Jun; ESD robustness improving for the low-voltage triggering silicon-controlled rectifier by adding NWell at cathode, Solid-State Electronics, 2018, 139(2018)：69-74.
[13] Jian Guan, Yang Wang*, Shanwan Hao, Yifei Zheng, Xiangliang Jin. A novel high holding voltage dual-direction SCR with embedded structure for HV ESD protection[J]. IEEE Electron Device Letters, 2017, 38(12) :1716-1719.
[14] Yang Wang*, Ning Lin, Xiao-Lei Cui, and Xiang-Liang Jin，Study of Holding Voltage Behaviors in Multi-finger Dual Direction SCR，Journal of Electrical Engineering & Technology, 2016, 11: 1921-1925.
[15] Yang Wang*，Xiangliang Jin，Acheng Zhou，Liu Yang，Cathode Side Engineering to Raise Holding Voltage of SCR in a 0.5-μm 24V CDMOS Process，Journal of Semiconductor Technology and Science, 2015, 15(6):601-607.
[16] Yang Wang，Xiangliang Jin*，Liu Yang，Robust LDMOS with Interleaved Bulk and Source for High-Voltage ESD Protection，IET Power Electronics, 2015, 8(11): 2251-2256.
[17] Yang Wang, Xiangliang Jin*, Liu Yang, Qi Jiang，Huihui Yuan，Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection, Microelectronics Reliability, 2015, 55(2015): 520-526.
[18] WANG Yang ，JIN Xiang-liang*，ZHOU A-cheng，Novel LDNMOS embedded SCR with strong ESD robustness based on 0.5 μm 18 V CDMOS technology, J. Cent. South Univ., 2015, 22(2015): 552-559.
[19] Wang, Yang*; Jia, Dandan; Chen, Xijun; Jin, Xiangliang; Analysis of Turn-on Uniformity of Multi-finger DDSCR Devices under ESD Stress, The 26th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Hangzhou, China, 2019, July 2nd-5th.
[20] Wang, Yang*; Liao, Hanzhang; Jin, Xiangliang; Design of A Novel Pop-and-Click Noise Suppression Circuit for the Audio Power Amplifier, The 2nd International Conference on Electronics Technology (ICET 2019), Chengdu, China, 2019, May 10th-13th.
[21] Wang, Yang*; Chen, Xijun; Hao, Shanwan; Jin, Xiangliang; Layout Geometry Impact on DDSCR Devices for High Voltage ESD Protection, The 3rd International Conference on Integrated Circuits and Microsystems, Shanghai, China, 2018, Nov.24th -26th.
[22] Yang Wang，Xiangliang Jin，Acheng Zhou，Liu Yang，Improvement on ESD Robustness of LDMOS by Bulk and Source Interleaved Dotting，2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC2014)，2014.6.18-2014.6.20.
[23] Yang Wang，Xiangliang Jin，Huihui Yuan，Qi Jiang，Liu Yang，Investigation of layout effect on ESD performance of SCR-NLDMOS device，2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)，2014.10.28-2014.10.31.
[24] Yang Wang，Acheng Zhou，Xiangliang Jin，Design and analysis of dual direction SCR ESD devices in 0.5μm 5V/18V CDMOS technology，2012 International Conference on Electronic Information and Electrical Engineering，2012.6.15-2012.6.17.
[25] 汪洋, 周阿铖, 朱科翰, 金湘亮. 18V LDMOS 器件 ESD 电流非均匀分布的模拟和测试分析. 固体电子学研究与进展, 2012, 32(3): 269-274.
[26] Yongming Yan，Yang Wang，Yun Zeng，Xiangliang Jin，Layout geometry impact on nLDMOS devices for high-voltage ESD protection，Electronics Letters，2015，51（23）：1902-1904。
[27] Liu Yang，Yang Wang，Acheng Zhou，Xiangliang Jin ，Design, fabrication and test of novel LDMOS-SCR for improving holding voltage，Solid-State Electronics，2014，103（2015）：122-126。
[28] Acheng Zhou，Yang Wang，Kehan Zhu，Xiangliang Jin ，Investigation of pickup effect for multi-fingered ESD devices in 0.5 um 5V/18V CDMOS process，Electronics Letters，2012，48（15）：911-913。
[29] Qi Jiang，Huihui Yuan，Yang Wang，Xiangliang Jin ，Design and analyze of transient-induced latch-up in RS485 transceiver with on-chip TVS，Microelectronics Reliability，2015，55（2015）：637-644。
[1]汪洋; 陈锡均; 夹丹丹; 芦俊; 周子杰, 一种内嵌P+ 注入区分段型非对称可控硅静电释放器件, 中国, 发明专利, ZL 2019 1 1118001.5.
[2] 汪洋; 夹丹丹; 杨红姣; 芦俊, 一种高防护等级双向可控硅静电防护器件及其制作方法, 中国, 发明专利, ZL 2018 1 0578171.0.
[3] 汪洋; 陈锡均; 周子杰, 一种低压触发高维持电压可控硅整流器静电释放器件, 中国, 发明专利, ZL 2018 1 0578320.3.
[4]汪洋; 关健; 金湘亮, 一种嵌套型多指双向可控硅静电防护器件, 中国, 发明专利, ZL 2017 1 0924403.9.
[1] 汪洋(1/5)，瞬态电压抑制静电保护器件关键技术及应用，湖南省科技进步三等奖，2019。（汪洋，周子杰，董鹏，张继文，黄晖）
[2] 汪洋(2/7)，高压工艺用芯片级集成的静电释放器件新技术与应用，湖南省科技进步三等奖，2014。（金湘亮，汪洋，谢亮，杨红姣，崔杨，刘航，马铭磷）
[3] 汪洋(4/5)，新一代数字硅微麦克风信号处理芯片技术研发及其应用，湘潭市科技进步三等奖，2014。（金湘亮，谢亮，张文杰，汪洋，杨红姣）
